zxmn3a01f document number: ds 33528 rev. 4 - 2 1 of 7 www.diodes.com january 2015 ? diodes incorporated zxmn3a01f advanced information 30v n - channel enhancement mode mosfet product summary v (br)dss r ds(on) i d t a = +25c 30 v 0.12 @ v gs = 10 v 2.0 a description this new generation mosfet has been designed to minimize the on - state resistance (r ds(on) ) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. applications ? dc - dc c onverters ? power m anagement f unctions ? motor c ontrol features ? low on - resistance ? fast switching speed ? low threshold ? low gate drive ? small surface mount package ? totally lead - free & fully rohs compliant (notes 1 & 2) ? halogen and antimony free. green device (note 3) ? qualified to aec - q101 standards for high reliability mechanical data ? case: sot 2 3 ? case material: molded plastic. ul flammability classification rating 94v - 0 ? moisture sensitivity: level 1 per j - std - 020 ? terminals: solderable per mil - std - 202, method 208 ? lead free plating (matte tin finish a nnealed over alloy 42 l eadframe) ? terminal connections: see diagram ? weight: 0.006 grams ( a pproximate) ordering information (note 4) part number case packaging zxmn3a01fta sot23 3,000/tape & reel zxmn3a01ftc sot23 10,000/tape & reel note s: 1 . no purposely added lead. fully eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. 2. see http://www.diodes.com/quality/lead_free.html for more information about diodes incorporateds definitions of hal ogen - and antimony - free, "green" and lead - f ree . 3. halogen - and antimony - free "green products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4 . for packaging de t ails, go to our website at http: //www.diodes.com/products/packages.html . marking information top view top view pin configuration equivalent circuit 7n3 = product type marking code 7n3 d s g e3 d g s
zxmn3a01f document number: ds 33528 rev. 4 - 2 2 of 7 www.diodes.com january 2015 ? diodes incorporated zxmn3a01f advanced information maximum ratings (@ t a = +25c, unless otherwise specified.) characteristic symbol value units drain - source voltage v dss 30 v gate - source voltage v gss gs = 10 v (note 6 ) (note 6 ) (note 5 ) t a = + 25c t a = + 70c t a = +25c i d 2.0 1.6 1.8 a pulsed drain curren t (note 7 ) i dm 8 a maximum body diode continuous current (note 6 ) i s 1.3 a thermal characteristics (@ t a = +25c, unless otherwise specified.) characteristic symbol value units total power dissipation linear derating factor (note 5 ) p d 625 m w 5 m w / c total power dissipation linear derating factor (note 6 ) p d 806 m w 6.4 m w / c thermal resistance, junction to ambient (note 5 ) r ja 200 c/w (note 6 ) 1 55 operating and storage temperature range t j, t stg - 55 to +1 50 c notes: 5 . for a d evice surface mounted on 25mm x 25mm fr - 4 pc b with high coverage of single sided 1oz copper, in still air conditions. 6 . for a d evice surface mounted on fr - 4 pc b measured at t Q 5 s ecs. 7. repetitive rating 25mm x 25mm fr - 4 pcb, d = 0.05, pulse width 10 s - pulse width limited by maximum junction temperature. refer to transient thermal impedance graph.
zxmn3a01f document number: ds 33528 rev. 4 - 2 3 of 7 www.diodes.com january 2015 ? diodes incorporated zxmn3a01f advanced information electrical characteristics ( @ t a = + 25c , unless otherwise specified .) characteristic symbol min typ max unit test condition off characteristics drain - source breakdown voltage bv dss 30 ? ? gs = 0v, i d = 250 a zero gate voltage drain current i dss ? ? ds = 3 0v, v gs = 0v gate - body leakage i gss ? ? gs = v ds = 0v on characteristics gate threshold voltage v gs(th) 1 ? ds = v gs , i d = 250 a static drain - source on - resistance (note 8) r ds (on) ? ? gs = 10 v , i d = 2.5 a ? ? ? ? ? gs = 4.5 v, i d = 2 a forward transconductance g fs ? ? ds = 4. 5 v, i d = 2.5 a diode forward voltage (note 8 & 10) v sd ? ? ? gs = 0v, i s = 1.7 a , t j = +25c dynamic characteristics (note 10 ) input capacitance c iss ? ? ds = 25 v, v gs = 0v , f = 1 mhz output capacitance c oss ? ? rss ? ? g ? ? ? ? ds = 1 5 v, v gs = 5 v , i d = 2.5 a total gate charge (note 9) q g ? ? ds = 1 5 v, v gs = 10 v, i d = 2.5 a gate - source charge (note 9) q gs ? ? gd ? ? d(on) ? ? d d = 15 v , i d = 2 .5 a , r g = 6 g s = 10 v turn - on rise time (note 9) t r ? ? d(off) ? ? ? ? f ? ? ? ? rr ? ? ? ? j = +25c , i f = 2.5 a , di/dt= 100a/ s reverse recovery charge qrr ? ? ? ? notes: 8 . measured under pulsed conditions. width=300 s . duty cycle Q 2% . 9. switching characteristics are independent of operating junction temperature. 10 . guaranteed by design. not subject to production testing.
zxmn3a01f document number: ds 33528 rev. 4 - 2 4 of 7 www.diodes.com january 2015 ? diodes incorporated zxmn3a01f advanced information
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zxmn3a01f document number: ds 33528 rev. 4 - 2 6 of 7 www.diodes.com january 2015 ? diodes incorporated zxmn3a01f advanced information package outline dimensions please see ap02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. sot23 dim min max typ a 0.37 0.51 0.40 b 1.20 1.40 1.30 c 2.30 2.50 2.40 d 0.89 1.03 0.915 f 0.45 0.60 0.535 g 1.78 2.05 1.83 h 2.80 3.00 2.90 j 0.013 0.10 0.05 k 0. 890 1. 0 0 0.975 k1 0.903 1.10 1.0 25 l 0.45 0.61 0.55 l 1 0. 2 5 0. 55 0. 40 m 0.085 0.1 50 0.11 0 a ? all dimensions in mm suggested pad layout please see ap02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. dimensions value (in mm) z 2.9 x 0.8 y 0.9 c 2.0 e 1.35 j k1 k l1 gauge plane 0.25 h l m all 7 a c b d g f a x e y c z
zxmn3a01f document number: ds 33528 rev. 4 - 2 7 of 7 www.diodes.com january 2015 ? diodes incorporated zxmn3a01f advanced information important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. diodes incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license unde r its patent or trademark rights, nor the rights of others. any customer or user of t his document or products described herein in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diod es incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthor ized sales channel. should customers purchase or use diodes incorporated products for any unintended or unauthorized application , customers shall indemnify and hold diodes incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product nam es and markings noted herein may also be covered by one or more united states, international or fore ign trademarks. this document is written in english but may be translated into multiple languages for reference. only the english version of this document is the final and determinative format released by diodes incorporated. life support diodes incorp orated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devices or syst ems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support device or system whose failure to perform can be reasonably expe cted to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support d evices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safe ty - related requirements concerning their products and any use of diodes incorporated products in such safety - critical, life support devices or systems, notwithstanding any devices - or systems - related information or support that may be provided by diodes in corporated. further, customers must fully indemnify diodes incorporated and its representatives against any damages arising out of the use of diodes incorporated products in such safety - critical, life support devices or systems. copyright ? 201 5 , diodes incorporated www.diodes.com
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